LPCVD stands for Low Pressure Chemical Vapor Deposition.
This is a technique used in the semiconductor industry.
It helps to deposit thin films of various materials onto a substrate.
The process involves using reactive gases at low pressures.
These pressures are typically below 133 Pa.
The process is performed in a high thermal environment.
This method allows for excellent film uniformity.
It also ensures resistivity uniformity and trench coverage filling capability.
This is due to the increased gas diffusion coefficient and mean free range within the reaction chamber.
LPCVD is widely used for depositing materials such as polysilicon, silicon nitride, and silicon dioxide.
It is favored for its ability to produce films with fewer defects and higher step coverage compared to thermally grown films.
The process is also notable for its precision in controlling temperature.
This contributes to the high uniformity of the deposited films across different wafers and runs.
What is LPCVD Stand For? 5 Key Points Explained
1. Definition of LPCVD
LPCVD stands for Low Pressure Chemical Vapor Deposition.
2. Application in Semiconductor Industry
It is a technique used in the semiconductor industry to deposit thin films of various materials onto a substrate.
3. Process Details
The process involves the use of reactive gases at low pressures, typically below 133 Pa, and is performed in a high thermal environment.
4. Advantages of LPCVD
This method allows for excellent film uniformity, resistivity uniformity, and trench coverage filling capability due to the increased gas diffusion coefficient and mean free range within the reaction chamber.
5. Materials Deposited
LPCVD is widely used for depositing materials such as polysilicon, silicon nitride, and silicon dioxide, among others, and is favored for its ability to produce films with fewer defects and higher step coverage compared to thermally grown films.
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